r07ds0672ej0100 rev.1.00 page 1 of 7 jul 23, 2012 preliminary datasheet bcr12lm-16lb triac midium power use features ? i t (rms) : 12a ? v drm : 800 v ? tj: 150 c ? i fgti , i rgti , i rgt iii :30 ma ? viso:1800v ? the product guaranteed maximum junction temperature 150 ? c ? insulated type ? planar passivation type ? ul recognized: file no. e223904 outline renesas package code: prss0003af-a (package name: to-220fl) 1 2 3 2 1 3 1. t 1 terminal 2. t 2 terminal 3. gate terminal applications switching mode power supply, washing machine, motor control, heater control, and other general purpose control applications. maximum ratings voltage class parameter symbol 16 unit repetitive peak off-state voltage note1 v drm 800 v non-repetitive peak off-state voltage note1 v dsm 960 v notes: 1. gate open. r07ds0672ej0100 rev.1.00 jul 23, 2012
bcr12lm-16lb preliminary r07ds0672ej0100 rev.1.00 page 2 of 7 jul 23, 2012 parameter symbol ratings unit conditions rms on-state current i t (rms) 12 a commercial frequency, sine full wave 360 conduction, tc = 90 ? c note3 surge on-state current i tsm 120 a 60hz sinewave 1 full cycle, peak value, non-repetitive i 2 t for fusion i 2 t 60 a 2 s value corresponding to 1 cycle of half wave 60hz, surge on-state current peak gate power dissipation p gm 5 w average gate power dissipation p g (av) 0.5 w peak gate voltage v gm 10 v peak gate current i gm 2 a junction temperature tj ?40 to +150 ? c storage temperature tstg ?40 to +150 ? c mass ? 1.5 g typical value isolation voltage viso 1800 v ta = 25 ? c, ac 1 minute t 1 t 2 g terminal to case electrical characteristics rated value parameter symbol min. typ. max. unit test conditions repetitive peak off-state current i drm ? ? 2.0 ma tj = 150 ? c, v drm applied on-state voltage v tm ? ? 1.6 v tc = 25 ? c, i tm = 20a, instantaneous measurement ? v fgt ? ? ? 1.5 v ?? v rgt ? ? ? 1.5 v gate trigger voltage note2 ??? v rgt ??? ? ? 1.5 v tj = 25 ? c, v d = 6 v, r l = 6 ? , r g = 330 ? ? i fgt ? ? ? 30 ma ?? i rgt ? ? ? 30 ma gate trigger curent note2 ??? i rgt ??? ? ? 30 ma tj = 25 ? c, v d = 6 v, r l = 6 ? , r g = 330 ? gate non-trigger voltage v gd 0.2 ? ? v tj = 125 ? c, v d = 1/2 v drm 0.1 ? ? v tj = 150 ? c, v d = 1/2 v drm thermal resistance r th (j-c) ? ? 4.1 ? c/w junction to case note3 critical-rate of rise of o ff-state (dv/dt)c 10 ? ? v/ ? s tj = 125 ? c commutation voltage note4 1 ? ? v/ ? s tj = 150 ? c notes: 2. measurement using the gate tr igger characteristics measurement circuit. 3. the contact thermal resistance rt h (c-f) in case of greasing is 0.5 ? c/w. 4. test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature tj = 125/150 ? c 2. rate of decay of on-state commutating current (di/dt)c = ?6 a/ms 3. peak off-state voltage v d = 400 v supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c
bcr12lm-16lb preliminary r07ds0672ej0100 rev.1.00 page 3 of 7 jul 23, 2012 performance curves 10 3 10 2 10 1 ?40 0 40 80 120 160 maximum on-state characteristics on-state voltage (v) on-state current (a) rated surge on-state current conduction time (cycles at 60hz) surge on-state current (a) gate characteristics gate current (ma) gate voltage (v) gate trigger voltage vs. junction temperature junction temperature (c) gate trigger voltage (tj = tc) gate trigger voltage (tj = 25c) 100 (%) gate trigger current vs. junction temperature junction temperature (c) gate trigger current (tj = tc) gate trigger current (tj = 25c) 100 (%) maximum transient thermal impedance characteristics (junction to case) conduction time (cycles at 60hz) transient thermal impedance (c/w) 4.0 1.5 2.5 3.5 0.5 1.0 2.0 3.0 10 3 10 2 10 1 10 ? 1 10 0 200 0 40 120 160 80 10 0 10 1 10 2 10 3 10 2 10 1 ?40 0 40 80 120 160 typical example typical example 10 1 10 0 10 ? 1 10 1 10 2 10 1 10 0 10 ? 1 10 3 10 2 10 2 10 3 p gm = 5w i gm = 2a v gm = 10v v gt = 1.5v 0 1 3 4 5 p g(av) = 0.5w 2 tj = 25c tj = 150c i fgt i i rgt i , i rgt iii i fgt i , i rgt iii i rgt i v gd = 0.1v
bcr12lm-16lb preliminary r07ds0672ej0100 rev.1.00 page 4 of 7 jul 23, 2012 maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance (c/w) conduction time (cycles at 60hz) on-state power dissipation (w) rms on-state current (a) maximum on-state power dissipation rms on-state current (a) case temperature (c) allowable case temperature vs. rms on-state current rms on-state current (a) allowable ambient temperature vs. rms on-state current ambient temperature (c) rms on-state current (a) ambient temperature (c) allowable ambient temperature vs. rms on-state current junction temperature (c) repetitive peak off-state current (tj = tc) repetitive peak off-state current (tj = 25c) 100 (%) repetitive peak off-state current vs. junction temperature 16 12 6 4 2 14 10 8 0 16 024 8 610121 4 160 120 100 60 20 0 4.0 0 0.5 1.5 2.5 3.5 40 80 140 1.0 2.0 3.0 no fins 360 conduction resistive, inductive loads natural convection no fins curves apply regardless of conduction angle resistive, inductive loads 160 120 100 60 20 0 16 02 6 10 14 40 80 140 48 12 160 120 100 60 20 0 16 02 6 10 14 40 80 140 48 12 60 60 t2.3 120 120 t2.3 100 100 t2.3 curves apply regardless of conduction angle all fins are black painted aluminum and greased curves apply regardless of conduction angle resistive, inductive loads natural convection 360 conduction resistive, inductive loads 10 3 10 1 10 1 10 2 10 3 10 4 10 5 10 ? 1 10 2 10 0 10 6 10 4 10 2 10 5 10 3 ?40 0 40 80 120 160 typical example
bcr12lm-16lb preliminary r07ds0672ej0100 rev.1.00 page 5 of 7 jul 23, 2012 holding current vs. junction temperature junction temperature (c) holding current (tj = tc) holding current (tj = 25c) 100 (%) latching current (ma) latching current vs. junction temperature junction temperature (c) typical example t 2 + , g + t 2 ? , g ? typical example t 2 + , g ? typical example distribution 10 3 10 3 10 2 10 1 10 0 10 1 10 2 ?40 0 40 80 120 160 ?40 0 40 80 120 160 rate of rise of off-state voltage (v/ s) breakover voltage (dv/dt = xv/ s) breakover voltage (dv/dt = 1v/ s) 100 (%) breakover voltage (dv/dt = xv/ s) breakover voltage (dv/dt = 1v/ s) 100 (%) breakover voltage vs. rate of rise of off-state voltage (tj=125c) 10 2 10 3 10 1 10 4 0 20 40 80 60 100 120 160 140 typical example tj = 125c iii quadrant i quadrant rate of rise of off-state voltage (v/ s) breakover voltage vs. rate of rise of off-state voltage (tj=150c) commutation characteristics (tj=125c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a/ms) commutation characteristics (tj=150c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a/ms) 10 2 10 3 10 1 10 4 10 1 10 0 10 2 10 1 10 0 10 2 10 0 10 1 10 2 10 0 10 1 10 2 0 20 40 80 60 100 120 160 140 typical example tj = 150c typical example tj = 125c, i t = 4a = 500 s, v d = 200v, f = 3hz iii quadrant i quadrant main voltage main current i t (di/dt)c v d time time (dv/dt)c iii quadrant i quadrant iii quadrant i quadrant minimum value main voltage main current i t (di/dt)c v d time time (dv/dt)c typical example tj = 150c, i t = 4a = 500 s, v d = 200v, f = 3hz
bcr12lm-16lb preliminary r07ds0672ej0100 rev.1.00 page 6 of 7 jul 23, 2012 c 1 = 0.1 to 0.47 f r 1 = 47 to 100 c 0 = 0.1 f r 0 = 100 gate trigger characteristics test circuits recommended circuit values around the triac test procedure i test procedure iii test procedure ii 330 330 330 c 1 c 0 r 0 r 1 6 6 6v 6v a v a v 6 6v a v load breakover voltage vs. junction temperature junction temperature (c) breakover voltage (tj = tc) breakover voltage (tj = 25c) 100 (%) 0 20 40 80 60 100 120 140 160 ?40 0 40 80 120 160 typical example gate trigger current (tw) gate trigger current (dc) 100 (%) gate current pulse width ( s) gate trigger current vs. gate current pulse width typical example i rgt iii i rgt i i fgt i 10 0 10 1 10 3 10 2 10 1 10 2
bcr12lm-16lb preliminary r07ds0672ej0100 rev.1.00 page 7 of 7 jul 23, 2012 package dimensions unit: mm previous code prss0003af-a to-220fl mass[typ.] 1.5g ? renesas code jeita package code package name to-220fl 3.6 0.3 15.0 0.3 12.5 0.5 10.0 0.3 6.5 0.3 3.2 0.2 0.75 0.15 1.15 0.2 2.54 0.25 2.54 0.25 2.6 0.2 4.5 0.2 0.40 0.15 2.8 0.2 1.15 0.2 3.0 0.3 ordering information orderable part number packing quantity remark bcr12lm-16lb#b00 tube 50 pcs. straight type bcr12lm-16lba8#b00 tube 50 pcs. a8 lead form note: please confirm the specificati on about the shipping in detail.
notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information incl uded herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". t he recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; an ti-crime systems; and safety equipment etc. renesas electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat t o human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). you mus t check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application for which it is not intended. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for which the product is not intended by renesas electronics. 6. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas e lectronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 7. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have s pecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance desig n. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics produc t, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measu res. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatib ility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, in cluding without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufactu re, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. you should not use renesas electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. when exporting the renesas electronics products or technology described in this do cument, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. it is the responsibility of the buyer or distributor of renesas electronics products, who distributes, disposes of, or othe rwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, renesas electronics assumes no responsibility for any losses incurred by yo u or third parties as a result of unauthorized use of renesas electronics products. 11. this document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of renesa s electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this doc ument or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. htt p ://www.renesas.co m refer to "htt p ://www.renesas.com/" for the latest and detailed information . r e n esas el ec tr o ni cs am e ri ca in c . 2880 scott boulevard santa clara , ca 95050-2554 , u.s.a . tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 1101 nicholson road, newmarket, ontario l3y 9c3, canada tel: +1-905-898-5441, fax: +1-905-898-3220 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-585-100, fax: +44-1628-585-900 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-21-5877-1818, fax: +86-21-6887-7858 / -7898 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 1 harbourfront avenue, #06-10, keppel bay tower, singapore 098632 tel: +65-6213-0200, fax: +65-6278-8001 renesas electronics mala y sia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petalin g jaya, selan g or darul ehsan, malaysi a tel: +60-3-7955-9390 , fax: +60-3-7955-951 0 renesas electronics korea co. , ltd . 11f., samik lavied' or bld g ., 720-2 yeoksam-don g , kan g nam-ku, seoul 135-080, korea tel: +82-2-558-3737 , fax: +82-2-558-514 1 s ale s o ffi c e s ? 2012 renesas electronics corporation. all ri g hts reserved . colo p hon 2.0
|
